Coherent control of solid-state defect spins via patterned boron-doped diamond circuit

TL;DR

This paper demonstrates the monolithic integration of a boron-doped diamond microwave circuit with nitrogen-vacancy spins in diamond, enabling coherent control with minimal heating, advancing scalable quantum device development.

Contribution

It introduces a novel monolithic diamond-based microwave circuit that coherently controls NV spins without affecting their relaxation times, enhancing quantum device integration.

Findings

High-frequency impedance of BDD circuit confirmed

Successful Rabi oscillations driven by integrated BDD circuit

Negligible microwave heating and unperturbed spin relaxation time

Abstract

Monolithic integration, which refers to the incorporation of all device functionalities within a single material, shows significant potential for creating scalable solid-state quantum devices. This study demonstrated the coherent control of nitrogen-vacancy (NV) spins using an electronic circuit monolithically integrated within diamond: a patterned, conductive boron-doped diamond (BDD) microwave waveguide. First, we validated the high-frequency performance of the circuit by characterizing its impedance up to the microwave range, confirming its capability for efficient microwave transmission. Then, using this monolithically integrated BDD--NV hybrid system, we performed optically detected magnetic resonance and observed noticeable Rabi oscillations driven by the metallic BDD circuit. Importantly, we verified that the BDD antenna has a minimal detrimental impact on the NV spins; microwave-induced heating is negligible under both pulsed and continuous driving, and the spin relaxation time ($T_1$) remains unperturbed. This approach paves the way for a new class of compact, robust, and versatile quantum platforms suitable for sensing and information processing in various environments.