The impact of strain on the GeV-color center in diamond
Thijs G.I. van Wijk, E. Aylin Melan, Rani Mary Joy, Emerick Y., Guillaume, Paulius Pobedinskas, Ken Haenen, and Danny E. P. Vanpoucke

TL;DR
This study models how different types of strain affect the optical properties of GeV centers in diamond, revealing significant shifts and broadening of the zero-phonon line relevant for quantum applications.
Contribution
It provides a detailed theoretical analysis of strain effects on GeV centers, including quantitative predictions of ZPL shifts and broadening under hydrostatic and linear strain.
Findings
Hydrostatic strain causes linear ZPL shifts with a clear relation to stress.
Linear strain along <100> only causes red-shifts in ZPL.
Calculated ZPL shifts are consistent with experimental observations.
Abstract
Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV. Both hydrostatic and linear strain are modeled using density functional theory for GeV concentrations of \% down to \%. We present qualitative and quantitative differences between the two strain types: for hydrostatic tensile and compressive strain, red-and blue-shifted ZPL positions are expected, respectively, with a linear relation between the ZPL shift and the experienced stress. By calculating the ZPL shift for varying GeV concentrations, a shift of nm/GPa ( meV/GPa) is obtained at experimentally relevant concentrations using a hybrid functional. In contrast, only red-shifted ZPL are found for tensile and compressive linear strain along the…
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Taxonomy
TopicsThin-Film Transistor Technologies · Advanced Surface Polishing Techniques
