Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT

TL;DR

This paper investigates the rapid hole storage effect in p-GaN gate double channel HEMTs under pulsed conditions, revealing a 150 ns build-up time due to structural confinement that enables high-frequency conductivity modulation.

Contribution

It provides the first detailed analysis of the high-frequency hole storage dynamics in p-GaN gate DC-HEMTs using pulsed measurements and simulations.

Findings

Hole storage completes in 150 ns despite low leakage

AlN layer enhances hole confinement and reduces recombination

High-frequency conductivity modulation is achievable

Abstract

Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure.