Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET

TL;DR

This paper introduces a machine learning approach using neural networks to efficiently predict key parameters of Negative Capacitance FETs, reducing computational costs and identifying optimal device configurations for enhanced performance.

Contribution

The study presents a novel neural network-based modeling method for NCFETs that improves prediction accuracy and reduces simulation time compared to traditional TCAD simulations.

Findings

Neural network effectively predicts analog and RF parameters of NCFETs.

Optimal device parameters identified: T=300K, T_{Fe}=4nm, T_{ox}=0.8nm, T_{sub}=3nm.

Performance improvements include higher switching ratio and lower leakage current.

Abstract

In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures ($T$), oxide thicknesses ($T_{ox}$), substrate thicknesses ($T_{sub}$), and ferroelectric thicknesses ($T_{Fe}$). Notably, at $T=300K$, the switching ratio is higher and the leakage current is $84$ times lower compared to $T=500K$. Similarly, at ferroelectric thicknesses $T_{Fe}=4nm$, the switching ratio improves by $5.4$ times compared to $T_{Fe}=8nm$. Furthermore, at substrate thicknesses $T_{sub}=3nm$, switching ratio increases by $81\%$ from $T_{sub}=7nm$. For oxide thicknesses at $T_{ox}=0.8nm$, the ratio increases by $41\%$ compared to $T_{ox}=0.4nm$. The analysis reveals that $T_{Fe}=4nm$, $T=300K$, $T_{ox}=0.8nm$, and $T_{sub}=3nm$ represent the optimal settings for D2GNCFETs, resulting in significantly improved performance. These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design.