Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons

TL;DR

This paper investigates how carbon-infused silicon LGAD sensors perform after exposure to highly non-uniform radiation from 24 GeV/c protons, providing essential data for their use in high-energy collider timing detectors.

Contribution

It presents the first measurement of LGAD sensor electrical properties after non-uniform irradiation with high-energy protons, highlighting radiation effects relevant for collider applications.

Findings

Current and capacitance behavior vary with irradiation level.

LGAD sensors maintain functionality after high-fluence irradiation.

Data informs design of radiation-hard timing detectors.

Abstract

Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major challenge for the use of LGADs is that these detectors must be placed within a few mm of the beams, resulting in a very large and highly non-uniform radiation environment. We present a first measurement of the current and capacitance vs. voltage behavior of LGAD sensors, after a highly non-uniform irradiation with beams of 24 GeV/c protons at fluences up to $1\times10^{16} p/cm^{2}$.