Advancing Simulations of Coupled Electron and Phonon Nonequilibrium Dynamics Using Adaptive and Multirate Time Integration

TL;DR

This paper introduces adaptive and multirate time integration methods that significantly improve the efficiency and accuracy of simulating coupled electron and phonon dynamics in materials, enabling longer and larger-scale simulations.

Contribution

The paper develops and demonstrates adaptive and multirate time integration techniques that accelerate coupled electron-phonon simulations by up to 10 times and improve accuracy, expanding feasible system sizes and timescales.

Findings

Achieved 10x speedup over conventional methods.

Enabled accurate simulations of electron-phonon dynamics in graphene for 100 ps.

Modeled ultrafast lattice dynamics and thermal scattering in silicon.

Abstract

Electronic structure calculations in the time domain provide a deeper understanding of nonequilibrium dynamics in materials. The real-time Boltzmann equation (rt-BTE), used in conjunction with accurate interactions computed from first principles, has enabled reliable predictions of coupled electron and lattice dynamics. However, the timescales and system sizes accessible with this approach are still limited, with two main challenges being the different timescales of electron and phonon interactions and the cost of computing collision integrals. As a result, only a few examples of these calculations exist, mainly for two-dimensional (2D) materials. Here we leverage adaptive and multirate time integration methods to achieve a major step forward in solving the coupled rt-BTEs for electrons and phonons. Relative to conventional (non-adaptive) time-stepping, our approach achieves a 10x speedup for a given target accuracy, or greater accuracy by 3-6 orders of magnitude for the same computational cost, enabling efficient calculations in both 2D and bulk materials. This efficiency is showcased by computing the coupled electron and lattice dynamics in graphene up to $\sim$100 ps, as well as modeling ultrafast lattice dynamics and thermal diffuse scattering maps in a bulk material (silicon). These results open new opportunities for quantitative studies of nonequilibrium physics in materials.