Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

TL;DR

This study investigates the magnetoresistance and Hall resistivity scaling in the altermagnet CrSb, revealing intrinsic electronic structure effects and the first observation of such scaling behavior in an altermagnetic material.

Contribution

It provides the first experimental observation of scaling behavior in Hall resistivity within an altermagnet and links magneto-transport properties to electronic structure and Lorentz force effects.

Findings

Magnetoresistance and Hall resistivity exhibit clear scaling behavior.

Nonlinear Hall resistivity arises from multi-band electronic structure.

Scaling behavior in Hall resistivity is observed for the first time in an altermagnet.

Abstract

The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_{N}$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.