A proposal for skyrmion-based diode-like device in antiferromagnetic nanostripe

TL;DR

This paper proposes a skyrmion-based diode device in antiferromagnetic nanostripes, utilizing engineered anisotropy barriers to control skyrmion motion directionally, advancing spintronic device design.

Contribution

It introduces a novel design for a skyrmion diode using geometric anisotropy barriers in antiferromagnetic nanostripes, with detailed analysis of parameters affecting performance.

Findings

Skyrmions can cross barriers in one direction but not the reverse.

Optimal current density and anisotropy are crucial for efficient transport.

Device geometry significantly influences skyrmion diode functionality.

Abstract

Micromagnetic simulations were employed to investigate the dynamics of a single skyrmion within an antiferromagnetic nanostripe with spatially engineered magnetic properties. This study investigates skyrmion motion within an antiferromagnetic nanostripe engineered with trapezoidal regions of enhanced magnetic anisotropy, enabling diode-like functionality by selectively directing skyrmion movement. Our findings demonstrate that skyrmions can cross these barriers in one direction while being obstructed in the reverse direction, mimicking diode behavior. A detailed analysis is presented on how geometric parameters, such as the inclination angle of the trapezoidal barriers, impact skyrmion motion and device efficacy. Additionally, we reveal that an optimal combination of current density and anisotropy is essential to facilitate efficient skyrmion transport through the nanostripe without reverse movement or annihilation. This work advances the development of skyrmion-based devices for spintronic applications. It provides valuable insights into designing structures that harness controlled topological dynamics