Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications

TL;DR

This paper presents a thermally engineered approach to improve polarization uniformity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ ferroelectric devices, enabling reliable, low-power memory and neuromorphic applications within back end of line thermal constraints.

Contribution

It introduces a thermal engineering method to achieve wafer-scale homogeneity in ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitors, enhancing device reliability for large-scale integration.

Findings

Wafer-scale homogeneity achieved in ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitors.

Improved device reliability suitable for ultralow power memory.

Compatibility with back end of line thermal budget.

Abstract

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric oxides suffer from crystalline inhomogeneity and defects that makes their large-scale circuit integration challenging. Here, we report on the thermally engineered way to induce wafer-scale homogeneity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitors that can lead to high device reliability making their integration possible in ultralow power memory and neuromorphic computing hardware.