Interface and spectrum multiplexing ptychographic reflection microscopy

TL;DR

This paper introduces a novel multiplexing ptychographic reflection microscopy technique that uses multi-wavelength illumination to accurately image layered semiconductor surfaces and their topographies in a single experiment, enhancing element-specific detection.

Contribution

It presents an innovative approach combining interface and spectrum multiplexing with multi-wavelength illumination for reflection ptychography, addressing previous limitations in layered material imaging.

Findings

Successful experimental demonstration of the method.

Accurate extraction of wavelength-dependent surface structures.

Potential for element-specific detection in semiconductor materials.

Abstract

Reflective ptychography is a promising lensless imaging technique with a wide field of view, offering significant potential for applications in semiconductor manufacturing and detection. However, many semiconductor materials are coated with different layers during processing, which leads to the reflected diffraction light being a coherent superposition of multiple light beams. Traditional phase recovery methods often overlook the multi-layered nature of these materials, resulting in artificial errors and, in some cases, failures in image reconstruction. This limitation has hindered the broader application and adoption of reflection ptychography. Here, we propose and experimentally demonstrate an innovative interface and spectrum multiplexing ptychographic reflection microscopy. By employing multi-wavelength light as the illumination source, our approach enables the accurate extraction of the wavelength-dependent surface structure imaging and topography mapping of materials in a single experiment. This advancement offers a reliable technique for element-specific detection of semiconductor materials, utilizing tabletop extreme ultraviolet light sources in the future.