The Non-Local Dual Phase Lag Model of Heat Conduction in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor
Sharif A. Sulaiman, Zahra Shomali

TL;DR
This paper introduces a nonlocal dual phase lag model for heat conduction in silicon transistors, accounting for nanoscale effects with improved accuracy and computational efficiency, highlighting the significance of non-locality in thermal predictions.
Contribution
It develops a nonlocal DPL model incorporating a non-locality parameter, enhancing the accuracy of nanoscale heat transport analysis in silicon transistors.
Findings
Non-locality parameter {b3} depends linearly on Knudsen number.
Non-local effects are more significant at higher Knudsen numbers.
Inclusion of {b3} improves thermal behavior predictions in micro/nano systems.
Abstract
As the transistors and consequently the chips are getting smaller, the accurate investigation of heat transport at micro/nanoscale, becomes an important issue of concern. This is due to an increase in the energy consumption and the leakage currents as a result of the miniaturization which requires taking care of the thermal behavior to make sure that the device is working in the threshold temperature regime. The current work deals with a two-dimensional framework, incorporating the nonlocality in space, for more accurate investigation of the nanoscale heat transport using the lower computational cost phenomenological macroscopical Dual Phase Lag (DPL) method. The non dimensional non-locality parameter {\gamma}, which indicates the strength of the non-locality, is embedded through the modified DPL model named as nonlocal DPL. It is obtained that for the two-dimensional silicon…
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
