Vertically Integrated Dual-memtransistor Enabled Reconfigurable Heterosynaptic Sensorimotor Networks and In-memory Neuromorphic Computing

TL;DR

This paper introduces a vertically integrated dual-memtransistor architecture that enables reconfigurable heterosynaptic sensorimotor networks and in-memory neuromorphic computing with high efficiency and biological plausibility.

Contribution

It presents a novel compact VSFET device combining ferroelectric and non-ferroelectric 2D materials for neuromorphic applications, demonstrating complex synaptic behaviors and logic reconfigurability.

Findings

Emulation of homosynaptic plasticity with high accuracy

Realization of heterosynaptic cooperation and competition behaviors

Logic reconfigurability for Boolean gates

Abstract

Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET) consisting of a 2D non-ferroelectric MoS$_2$ FET channel stacked on a 2D ferroelectric In$_2$Se$_3$ FET channel. Electrostatic coupling between the ferroelectric and non-ferroelectric semiconducting channels results in hysteretic transfer and output characteristics of both FETs. The gate-controlled MoS$_2$ memtransistor is shown to emulate homosynaptic plasticity behavior with low nonlinearity, low epoch, and high accuracy supervised (ANN - artificial neural network) and unsupervised (SNN - spiking neural network) on-chip learning. Further, simultaneous measurements of the MoS$_2$ and In$_2$Se$_3$ transistor synapses help realize complex heterosynaptic cooperation and competition behaviors. These are shown to mimic advanced sensorimotor neural network-controlled gill withdrawal reflex sensitization and habituation of a sea mollusk (Aplysia) with ultra-low power consumption. Finally, we show logic reconfigurability of the VSFET to realize Boolean gates thereby adding significant design flexibility for advanced computing technologies.