Large trion binding energy in monolayer WS$_2$ via strain-enhanced electron-phonon coupling

TL;DR

This study demonstrates that applying strain to monolayer WS$_2$ significantly enhances the trion binding energy by up to 100 meV, primarily through strain-induced electron-phonon coupling, improving optoelectronic device stability.

Contribution

It provides the first quantitative analysis of strain-induced enhancement of trion binding energy in WS$_2$, revealing a consistent tuning rate and underlying electron-phonon coupling mechanism.

Findings

Trion binding energy increased by 34 meV with 2% strain.

Achieved maximum trion binding energy of approximately 100 meV.

Strain enhances electron-phonon coupling, stabilizing excitonic states.

Abstract

Transition metal dichalcogenides and related layered materials in their monolayer and a few layers thicknesses regime provide a promising optoelectronic platform for exploring the excitonic- and many-body physics. Strain engineering has emerged as a potent technique for tuning the excitonic properties favorable for exciton-based devices. We have investigated the effects of nanoparticle-induced local strain on the optical properties of exciton, $X^0$, and trion, $X^\text{-}$, in monolayer WS$_2$. Biaxial tensile strain up to 2.0% was quantified and verified by monitoring the changes in three prominent Raman modes of WS$_2$: E${^1_{2g}}$($\Gamma$), A$_{1g}$, and 2LA(M). We obtained a remarkable increase of 34 meV in $X^\text{-}$ binding energy with an average tuning rate of 17.5 $\pm$ 2.5 meV/% strain across all the samples irrespective of the surrounding dielectric environment of monolayer WS$_2$ and the sample preparation conditions. At the highest tensile strain of $\approx$2%, we have achieved the largest binding energy $\approx$100 meV for $X^\text{-}$, leading to its enhanced emission intensity and thermal stability. By investigating strain-induced linewidth broadening and deformation potentials of both $X^0$ and $X^\text{-}$ emission, we elucidate that the increase in $X^\text{-}$ binding energy is due to strain-enhanced electron-phonon coupling. This work holds relevance for future $X^\text{-}$-based nano-opto-electro-mechanical systems and devices.