Switchable Chern insulator, isospin competitions and charge density waves in rhombohedral graphene moire superlattices
Jian Zheng, Size Wu, Kai Liu, Bosai Lyu, Shuhan Liu, Yating Sha,, Zhengxian Li, Kenji Watanabe, Takashi Taniguchi, Jinfeng Jia, Zhiwen Shi,, Guorui Chen

TL;DR
This paper explores various topological, magnetic, and charge density phases in rhombohedral graphene moire superlattices, revealing tunable Chern insulators and competing insulating states driven by external fields and electron polarization.
Contribution
It reports the first observation of a reversible Chern insulator at v=1 and identifies multiple insulating phases at v=2, demonstrating complex phase competition in rhombohedral graphene moire systems.
Findings
Reversible Chern insulator at v=1 with tunable Chern numbers.
Transitions between spin-antiferromagnetic, spin-polarized, and valley-polarized insulators at v=2.
Insulating states at fractional fillings v=1/3, 2/3, and 1/2 under magnetic fields.
Abstract
Graphene-based moire superlattices provide a versatile platform for exploring novel correlated and topological electronic states, driven by enhanced Coulomb interactions within flat bands. The intrinsic tunability of graphene s multiple degrees of freedom enables precise control over these complex quantum phases. In this study, we observe a range of competing phases and their transitions in rhombohedrally stacked hexalayer graphene on hexagonal boron nitride (r-6G/hBN) moire superlattices. When electrons are polarized away from the moire superlattice, we firstly identify a Chern insulator with reversible Chern numbers at v = 1 (one electron per moire cell), attributed to the competition between bulk and edge magnetizations.Then, we detect transitions between three distinct insulating states at v = 2, driven by vertical displacement field D and vertical magnetic field B. These insulating…
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