Tailored 1D/2D Van der Waals Heterostructures for Unified Analog and Digital Electronics
Bipul Karmakar, Bikash Das, Shibnath Mandal, Rahul Paramanik, Sujan, Maity, Tanima Kundu, Soumik Das, Mainak Palit, Koushik Dey, Kapildeb Dolui,, and Subhadeep Datta

TL;DR
This paper presents a novel vapor deposition method to create high-quality 1D/2D van der Waals heterostructures, enabling integrated analog and digital electronic devices on a single platform.
Contribution
It introduces a sequential vapor deposition process for mixed-dimensional vdW materials and demonstrates their application in integrated diode and CMOS circuits.
Findings
High-quality, defect-free 1D/2D heterostructures achieved.
Electrical measurements reveal atomically thin depletion regions.
Demonstrated integrated diode and CMOS logic operations.
Abstract
We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS (2D), on a single SiO wafer. Our growth technique offers a unique potential pathway to create large scale, high-quality, defect-free interfaces. The assembly of samples serves a twofold application: first, the as-prepared heterostructures (Te NW/MoS) provide insights into the atomically thin depletion region of a 1D/2D vdW diode, as revealed by electrical transport measurements and density functional theory-based quantum transport calculations. The charge transfer at the heterointerface is confirmed using Raman spectroscopy and Kelvin probe force microscopy (KPFM). We also observe modulation of the rectification ratio with varying applied gate voltage. Second, the non-hybrid regions on the substrate, consisting of the…
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Taxonomy
Topics2D Materials and Applications · Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena
