Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach

TL;DR

This paper investigates the magnetic behavior of doped semiconductors with disordered magnetic moments using a density of states approach, revealing insights into antiferromagnetic exchange interactions and their effects on susceptibility.

Contribution

It introduces a density of states method to analyze antiferromagnetic exchange interactions in disordered impurity semiconductors, providing quantitative agreement with experimental susceptibility data.

Findings

Good quantitative match with Si:P susceptibility data

Demonstrates the effectiveness of the density of states approach

Provides insights into magnetic interactions in disordered systems

Abstract

We present a theoretical study of the exchange interaction in a system of spatially disordered magnetic moments. A typical example of such a system is an impurity semiconductor, whose magnetic properties are associated with the exchange interaction of the impurity atoms. In this study, we consider the case of antiferromagnetic exchange interaction, which we describe by the Heisenberg Hamiltonian. To calculate the magnetic properties of the disordered system, we employ the density of states method. Our calculations demonstrate a good quantitative agreement with the dependence of the Si:P magnetic susceptibility on temperature in a wide range of impurity concentrations and temperatures.