Temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth films for X- ray transition-edge sensor absorbers

TL;DR

This paper explores the hysteretic and magnetoresistive behavior of electrodeposited bismuth films at low temperatures, revealing irreversible resistivity changes and magnetic field effects relevant for improving X-ray transition-edge sensors.

Contribution

It presents the first detailed analysis of temperature-induced hysteresis and magnetoresistance in electrodeposited bismuth films, informing TES absorber development.

Findings

Hysteretic and irreversible resistivity changes observed

Magnetoresistance varies with magnetic field and temperature

Potential weak anti-localization effects at low temperatures

Abstract

This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray detection. Through a series of resistance versus temperature measurements from room temperature to a few Kelvins, we explore the change in the conductive behavior of bismuth electrodeposited on various substrates at the various temperatures. Our findings show for the first time both hysteretic and irreversible changes in resistivity as a function of temperature. Further, magnetoresistance measurements reveal notable variations in resistance behavior under different magnetic fields, highlighting the impact of magnetic fields on these films' electronic transport properties, with an indication of potential weak anti-localization effects at the lowest temperatures. This study not only provides a deeper understanding of bismuth's conductivity characteristics at low temperatures but also sheds light on the practical implications for developing more effective TESs for synchrotron X-ray facilities.