Oxygen Vacancy-Induced Monoclinic Dead Layers in Ferroelectric $Hf_xZr_{1-x}O_2$ With Metal Electrodes
Tanmoy Kumar Paul, Atanu Kumar Saha, and Sumeet Kumar Gupta

TL;DR
This study uses first principles analysis to understand how oxygen vacancies and electrode materials influence the formation of non-polar monoclinic dead layers in Hf_xZr_{1-x}O_2 ferroelectric films, impacting device performance.
Contribution
It reveals the role of oxygen vacancy distribution, polarization direction, and electrode material in dead layer formation, providing insights for optimizing ferroelectric interfaces.
Findings
Oxygen vacancy position and polarization direction influence dead layer formation.
50% Zr doping reduces the likelihood of monoclinic dead layer formation.
Noble metal electrodes decrease the probability of dead layer formation.
Abstract
In this work, we analyze dead layer comprising non-polar monoclinic (m) phase in (HZO)-based ferroelectric (FE) material using first principles analysis. We show that with widely used tungsten (W) metal electrode, the spatial distribution of the oxygen vacancy across the cross-section plays a key role in dictating the favorability of m- phase formation at the metal-HfO2 interface. The energetics are also impacted by the polarization direction as well as the depth of oxygen vacancy, i.e., position along the thickness. At the metal - interface, when polarization points towards the metal and vacancy forms at trigonally bonded O atomic site, both interfacial relaxation and m- phase formation can lead to dead layers. For vacancies at other oxygen atomic sites and polarization direction, dead layer is formed due to sole interfacial relaxation with polar phase. We…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Machine Learning in Materials Science
