A high-performance all-silicon photodetector enabling telecom-wavelength detection at room temperature
Mohd Saif Shaikh, Mircea-Traian Catuneanu, Ahmad Echresh, Rang Li, Shuyu Wen, Guillermo Godoy-P\'erez, Slawomir Prucnal, Manfred Helm, Yordan M. Georgiev, Kambiz Jamshidi, Shengqiang Zhou, Yonder Berenc\'en

TL;DR
This paper introduces a novel all-silicon photodetector operating at telecom wavelengths, achieving high responsivity and bandwidth at room temperature, facilitating integration into silicon photonic circuits for improved optical communication.
Contribution
We demonstrate a high-performance, all-silicon waveguide-coupled photodetector using deep-level impurities to enable efficient sub-bandgap absorption at 1550 nm, eliminating the need for germanium integration.
Findings
Responsivity of 0.56 A/W at 1550 nm
Bandwidth of 2 GHz achieved
Quantum efficiency of 44.8%
Abstract
Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics. Telecom-wavelength photodetectors, operating near 1550 nm, are indispensable in PICs, where they enable the sensitive and low-noise conversion of optical signals to electrical signals for efficient data processing. While silicon is ideal for passive optical components, its limited absorption in the optical telecommunication range (1260-1625 nm) typically necessitates integrating an alternative material, such as germanium, for photodetection - a process that introduces significant fabrication challenges. Here, we present a high-performance, all-silicon waveguide-coupled photodetector, which operates at room temperature within the optical telecom C band. By introducing deep-level…
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Taxonomy
TopicsPhotonic and Optical Devices · Advanced Optical Sensing Technologies · Semiconductor Lasers and Optical Devices
