The Role of Defect Geometry in Localized Emission from Monolayer Tungsten Dichalcogenides
S. Carin Gavin, Moumita Kar, Jianguo Wen, Anushka Dasgupta, Jinxuan Pei, Yiying Liu, Boyu Zhang, Charles J. Zeman IV, F. Joseph Heremans, Tobin J. Marks, Mark C. Hersam, George C. Schatz, and Nathaniel P. Stern

TL;DR
This paper develops a computational and experimental framework to understand the microscopic origins of single photon emission in monolayer WSe2, linking defect geometry and electronic structure to quantum optical behavior.
Contribution
It introduces a realistic defect model based on microscopy and density functional theory, explaining SPE origins and differences between WSe2 and WS2.
Findings
Divacancy defect configuration matches observed spectral energies.
Defect geometry and chalcogen type critically influence SPE.
Mechanical strain modulates electronic structure and emission properties.
Abstract
Understanding the mechanism of single photon emission (SPE) in two-dimensional (2D) material is an unsolved problem important for quantum optical materials and the development of quantum information applications. In 2D transition metal dichalcogenides (TMDs) such as tungsten diselenide (WSe2), quantum emission has been broadly attributed to exciton localization from atomic point defects, yet the precise microscopic origins are not fully understood. This work introduces an empirically grounded computational framework that explains both the origins of facile SPE in WSe2 and its relative scarcity in related TMD, tungsten disulfide. High resolution microscopy identifies native defect geometries existing in monolayer WSe2 lattices providing the ingredients necessary to build a realistic model. The qualitative effects of chalcogen type, defect geometry, and mechanical strain on the electronic…
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Taxonomy
TopicsMolecular Junctions and Nanostructures · 2D Materials and Applications · Organic and Molecular Conductors Research
