Quantum anomalous Hall crystals in moir\'e bands with higher Chern number
Raul Perea-Causin, Hui Liu, Emil J. Bergholtz

TL;DR
This paper demonstrates the existence and stability of quantum anomalous Hall crystals with higher Chern number in moiré materials, specifically twisted multilayer graphene, providing experimental guidance and expanding topological phase understanding.
Contribution
It introduces stable QAHCs with C=2 in moiré bands at fractional filling, supported by exact diagonalization, and offers practical parameters for experimental realization.
Findings
QAHCs with C=2 are stable at 2/3 filling in moiré bands.
Robustness of QAHC in twisted bilayer-trilayer graphene.
Guidelines for experimental tuning of twist angle and electric field.
Abstract
The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous Hall crystals (QAHCs), which combine the zero-field quantum Hall effect with spontaneously broken discrete translation symmetry. Here, we employ exact diagonalization to demonstrate the existence of stable QAHCs arising from -filled moir\'e bands with Chern number . Our calculations show that these topological crystals, which are characterized by a quantized Hall conductivity of (in units of ) and a tripled unit cell, are robust in an ideal model of twisted bilayer-trilayer graphene -- providing a novel explanation for experimental observations in this heterostructure. Furthermore, we predict that the QAHC remains robust in a…
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