Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing, Wang, Eva Mayer, Jochen M. Schneider, Agata Piacentini, Max C. Lemme, Michael, Heuken, Holger Kalisch, Andrei Vescan

TL;DR
This paper presents a scalable dry-transfer method using PMMA and thermal release tape for 2D-TMDC layers, improving reproducibility, cleanliness, and device performance in heterogenous integration compared to traditional wet methods.
Contribution
Introduces a novel dry-transfer technique for 2D-TMDCs that enhances reproducibility and preserves material quality during transfer from growth to target substrates.
Findings
Dry transfer yields cleaner and more structurally intact layers.
FETs show improved subthreshold slope and drain current.
Method enables large-area, high-reproducibility integration.
Abstract
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon dioxide (Si/SiO) substrate is performed using PMMA (poly(methyl methacrylate)) and TRT (thermal release tape) as sacrificial layer and carrier, respectively. Our proposed method ensures a reproducible peel-off from the growth substrate and better preservation of the 2D-TMDC during PMMA removal in solvent, without compromising its adhesion to the target substrate. A comprehensive comparison between the dry method introduced in this work and a standard wet transfer based on potassium…
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Taxonomy
TopicsSemiconductor materials and devices · 3D IC and TSV technologies
