BEOL Electro-Biological Interface for 1024-Channel TFT Neurostimulator with Cultured DRG Neurons

TL;DR

This paper presents a novel 1024-channel neurostimulator with integrated bioelectrodes and waterproof encapsulation, enabling precise stimulation of dorsal root ganglion neurons for advanced brain-computer interface applications.

Contribution

It introduces a BEOL process for high-channel-count neurostimulators with bioelectrodes and waterproofing, using low-temperature poly-silicon TFTs and PEDOT:PSS for improved biocompatibility.

Findings

Successful stimulation of DRG neurons demonstrated

High channel density achieved with integrated bioelectrodes

Enhanced biocompatibility and waterproofing for implantable devices

Abstract

The demand for high-quality neurostimulation, driven by the development of brain-computer interfaces, has outpaced the capabilities of passive microelectrode-arrays, which are limited by channel-count and biocompatibility. This work proposes a back-end-of-line (BEOL) process for 1024-channel stimulator with bioelectrodes and waterproof encapsulation to stimulate dorsal root ganglion neurons. We introduce an active-matrix neurostimulator based on n-type low-temperature poly-silicon thin-film transistor, adding PEDOT:PSS and SU-8 as bioelectrodes and encapsulation. This enables precise stimulation of DRG neurons, addressing key challenges in neurostimulation systems.