Light-induced hysteresis of electronic polarization in antiferromagnet FePS3
Kyung Ik Sim, Byung Cheol Park, Taesoo Kim, Byeong Wook Cho, Jae Hoon, Kim, Eun-Mi Choi, and Young Hee Lee

TL;DR
This study demonstrates light-induced hysteresis of electronic polarization in antiferromagnetic FePS3, revealing a new mechanism for controlling electronic polarization in magnetic materials with potential device applications.
Contribution
It uncovers a novel light-induced hysteresis of electronic polarization in FePS3, linked to symmetry breaking and octupolar polarization effects, advancing understanding of light-matter interactions in magnetic semiconductors.
Findings
Hysteresis occurs at 2.0 eV due to octupolar polarization.
Electronic polarization aligns along different axes depending on photon energy.
Hysteresis is associated with symmetry breaking in the light-induced phase.
Abstract
Research on manipulating materials using light has garnered significant interest, yet examples of controlling electronic polarization in magnetic materials remain scarce. Here, we demonstrate the hysteresis of electronic polarization in the antiferromagnetic semiconductor FePS3 via light. Below the N\'eel temperature, we observe linear dichroism (i.e., optical anisotropy) without structural symmetry breaking. Light-induced net polarization aligns along the a-axis (zigzag direction) at 1.6 eV due to the dipolar polarization and along the b-axis (armchair direction) at 2.0 eV due to the combined effects of dipolar and octupolar polarizations, resulting from charge transfer from the armchair to the zigzag direction by light. Unexpected hysteresis of the electronic polarization occurs at 2.0 eV due to the octupolar polarization, in contrast to the absence of such hysteresis at 1.6 eV. We…
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Taxonomy
TopicsMagnetic properties of thin films · Magnetism in coordination complexes · 2D Materials and Applications
