Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

TL;DR

This paper explores the potential of novel 2D semiconductors Bi2O2Se, InSe, and MoSi2N4 for ultra-scaled 1 nm transistors, demonstrating their promising electrical properties through advanced quantum transport simulations.

Contribution

It introduces a first-principles based quantum transport model to evaluate 2D semiconductors for 1 nm transistors, highlighting their performance and design considerations.

Findings

MoSi2N4 shows high immunity to quantum tunneling.

Bi2O2Se exhibits superior electrostatics.

All materials achieve I_ON/I_OFF > 10^3 at 12 nm channel length.

Abstract

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transistors. Here, we identify InSe, Bi2O2Se, and MoSi2N4 as potential two-dimensional semiconductors for 1 nm transistors with low contact resistance and outstanding interface properties. We employ a fully self-consistent ballistic quantum transport model starting from first-principle calculations. Our simulations show that the interplay between electrostatics and quantum tunneling influences the performance of these devices over the device design space. MoSi2N4 channels have the best immunity to quantum tunneling, and Bi2O2Se channel devices have the best electrostatics. We show that for a channel length of 12 nm, all the devices can deliver I_$ON$/I_$OFF$ > 10^3 , suitable for electronic applications, and Bi2O2Se is the best-performing channel material.