ATOMS: ALMA Three-millimeter Observations of Massive Star-forming regions -- XIX. The origin of SiO emission

TL;DR

This study uses high-sensitivity ALMA observations to analyze SiO emission in 146 massive star-forming regions, revealing that most SiO originates from outflows and is influenced by UV radiation from UC HII regions.

Contribution

It provides a detailed analysis of SiO emission origins in massive star-forming regions, highlighting the role of outflows and UV effects from UC HII regions, which was not thoroughly characterized before.

Findings

Most SiO emission is from broad components linked to outflows.

SiO luminosity correlates positively with bolometric luminosity.

UC HII regions may influence SiO emission through UV photochemistry.

Abstract

The production of silicon monoxide (SiO) can be considered as a fingerprint of shock interaction. In this work, we use high-sensitivity observations of the SiO (2-1) and H$^{13}$CO$^{+}$ (1-0) emission to investigate the broad and narrow SiO emission toward 146 massive star-forming regions in the ATOMS survey. We detected SiO emission in 136 regions and distinguished broad and narrow components across the extension of 118 sources (including 58 UC $H_{II}$ regions) with an average angular resolution of 2.5$^{\prime}$$^{\prime}$. The derived SiO luminosity ($L_{SiO}$) across the whole sample shows that the majority of $L_{SiO}$ (above 66$\%$) can be attributed to broad SiO, indicating its association with strong outflows. The comparison of the ALMA SiO images with the filamentary skeletons identified from H$^{13}$CO$^{+}$ and in the infrared data (at 4.5, 8, and 24 $mu$m), further confirms that most SiO emission originates from outflows. However, note that for nine sources in our sample, the observed SiO emission may be generated by expanding UC $H_{II}$ regions. There is a moderate positive correlation between the bolometric luminosity ($L_{bol}$) and $L_{SiO}$ for both components (narrow and broad). The UC $H_{II}$ sources show a weaker positive correlation between $L_{bol}$ and $L_{SiO}$ and higher $L_{SiO}$ compared to the sources without UC $H_{II}$ regions. These results imply that the SiO emission from UC $H_{II}$ sources might be affected by UV-photochemistry induced by UC $H_{II}$ regions.