Enhancement of spin Hall angle by an order of magnitude via Cu intercalation in MoS$_2$/CoFeB heterostructures
Abhisek Mishra, Pritam Das, Rupalipriyadarsini Chhatoi, Soubhagya Dash, Shubhransu Sahoo, Kshitij Singh Rathore, Pil-Ryung Cha, Seung-Cheol Lee, Satadeep Bhattacharjee, Subhankar Bedanta

TL;DR
This paper demonstrates that intercalating copper in MoS₂/CoFeB heterostructures significantly enhances the spin Hall angle by preserving the TMD's spin-orbit coupling and increasing spin Hall conductivity, advancing spintronic device efficiency.
Contribution
It introduces Cu intercalation as an effective interface engineering strategy to boost spin-to-charge conversion in TMD-based heterostructures.
Findings
Order of magnitude increase in spin Hall angle due to Cu intercalation.
Cu does not significantly alter magnetic domain structures.
First-principles calculations show enhanced spin Berry curvature and spin Hall conductivity.
Abstract
Transition metal dichalcogenides (TMDs) are a novel class of quantum materials with significant potential in spintronics, optoelectronics, valleytronics, and opto-valleytronics. TMDs exhibit strong spin-orbit coupling, enabling efficient spin-charge interconversion, which makes them ideal candidates for spin-orbit torque-driven spintronic devices. In this study, we investigated the spin-to-charge conversion through ferromagnetic resonance in MoS/Cu/CoFeB heterostructures with varying Cu spacer thicknesses. The conversion efficiency, quantified by the spin Hall angle, was enhanced by an order of magnitude due to Cu intercalation. Magneto-optic Kerr effect microscopy confirmed that Cu did not significantly modify the magnetic domains, indicating its effectiveness in decoupling MoS from CoFeB. This decoupling preserves the spin-orbit coupling (SOC) of MoS by mitigating the…
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Taxonomy
TopicsSemiconductor materials and interfaces · Semiconductor materials and devices · Advancements in Battery Materials
