All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500 {\deg}C Using SiC Devices
F. Sgrignuoli, I. Viti, Z.G. Yu, E. Allridge, P. Lenahan, S. Goswami, R. Ghandi, M. Aghayan, and D.M.Shaddock

TL;DR
This paper demonstrates a simple, low-power electrical magnetometry method using NZFMR in SiC diodes capable of detecting weak magnetic fields at temperatures up to 500°C, suitable for extreme environments.
Contribution
It introduces a high-temperature, microwave-free magnetometry technique based on NZFMR in SiC, expanding applications in extreme conditions.
Findings
Sensitive detection of weak magnetic fields up to 500°C.
Low power consumption below 0.5 W at 500°C.
Elimination of complex microwave setups for magnetometry.
Abstract
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for magnetometry, it requires complex setups involving optical and microwave sources. Similarly, electrically detected magnetic resonance in SiC, which relies on an electrical readout of spin resonance, has also been explored for magnetometry. However, both techniques require microwave excitation, which limits their scalability. In contrast, SiC's spin-dependent recombination currents enable a purely electrical approach to magnetometry through the near-zero field magnetoresistance effect, where the device resistance changes in response to small magnetic fields. Despite its potential, NZFMR remains underexplored for high-temperature applications. In this work,…
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Taxonomy
TopicsGeophysical and Geoelectrical Methods · Geomagnetism and Paleomagnetism Studies · Magnetic Field Sensors Techniques
