Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission
Hao Liu, Yutong He, Bing Xiong, Changzheng Sun, Zhibiao Hao, Lai Wang,, Jian Wang, Yanjun Han, Hongtao Li, Lin Gan, Yi Luo

TL;DR
This paper presents a dual-band thin-film lithium niobate modulator with low-k underfill, achieving 220 GHz bandwidth and 390 Gbit/s PAM8 data transmission, advancing high-speed optical communication technology.
Contribution
It introduces a novel low-k underfill design that reduces RF loss and extends bandwidth, enabling ultra-high-speed data transmission in both C- and O-bands.
Findings
Achieved 220 GHz extrapolated bandwidth in a 7-mm modulator.
Demonstrated 390 Gbit/s PAM8 data transmission.
Low half-wave voltage of 1.9 V at C-band and 1.54 V at O-band.
Abstract
High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation ability are essential for various application scenarios, especially energy-efficient high-speed data transmission. However, it is challenging to meet all these requirements simultaneously. Here, we demonstrate a high-performance dual-band thin-film lithium niobate electro-optic modulator with low-k underfill to achieve overall performance improvement. The low-k material helps reduce the RF loss of the modulator and achieve perfect velocity matching with narrow electrode gap to overcome the voltage-bandwidth limitation, extending electro-optic bandwidth and enhancing modulation efficiency simultaneously. The fabricated 7-mm-long modulator exhibits a low…
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Taxonomy
TopicsSemiconductor materials and interfaces · 3D IC and TSV technologies · Semiconductor materials and devices
