Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

TL;DR

This study demonstrates the growth of crack-free Sc$_x$Al$_{1-x}$N layers on Si(111) using plasma-assisted molecular beam epitaxy, highlighting the effects of composition and temperature on layer quality and crystallinity.

Contribution

It introduces a method to synthesize high-quality, crack-free Sc$_x$Al$_{1-x}$N layers on silicon with controlled composition and improved crystallinity by optimizing growth temperature.

Findings

Crack-free layers achieved at lower growth temperatures.

Higher Sc content leads to crack formation due to thermal mismatch.

Lowering growth temperature to 500°C prevents cracking and enhances crystallinity.

Abstract

We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to single-domain N-polar [(000$\bar{1}$)-oriented] layers, as demonstrated by the ($3 \times 3$) pattern observed in reflection high-energy electron diffraction and confirmed by KOH etching. The subsequent growth of pure wurtzite Sc$_x$Al$_{1-x}$N layers with $x \leq 0.1$ is feasible at temperatures $\leq$ 740{\deg}C. However, layers with $x \geq 0.2$ grown at 740{\deg}C develop cracks due the high thermal mismatch between Sc$_x$Al$_{1-x}$N and Si. Lowering the growth temperature to 500{\deg}C not only prevents cracking but also improves the crystallinity of the layers. For Sc$_{0.3}$Al$_{0.7}$N layers grown at 500{\deg}C, additional x-ray reflections due to intermetallic AlSc and Al$_3$Sc inclusions are observed. The formation of these compounds can be inhibited by lowering the temperature further to 300{\deg}C.