Hybrid ferroelectric tunnel junctions: State-of-the-art, challenges and opportunities

TL;DR

This paper reviews the latest developments, challenges, and future opportunities in hybrid ferroelectric tunnel junctions, emphasizing their potential for advanced nonvolatile memory and nanoelectronic applications.

Contribution

It provides a comprehensive overview of novel physical phenomena, material combinations, and the emerging concept of ferroelectric resonant tunneling diodes in hybrid FTJs.

Findings

Room temperature ferroelectric control of tunneling parameters

Successful integration of ferroelectrics with 2D materials and superconductors

Potential for new device functionalities like negative differential resistance

Abstract

Ferroelectric tunnel junctions (FTJs) harness the unique combination of ferroelectricity and quantum tunneling, and thus herald new opportunities in next-generation nonvolatile memory technologies. Recent advancements in the fabrication of ultrathin heterostructures have enabled the integration of ferroelectrics with various functional materials, forming hybrid tunneling-diode junctions. These junctions benefit from the modulation of the functional layer/ferroelectric interface through ferroelectric polarization, thus enabling further modalities and functional capabilities than in addition to tunneling electroresistance. This perspective aims to provide in-depth insight into novel physical phenomena of several typical ferroelectric hybrid junctions, ranging from ferroelectric/dielectric, ferroelectric/multiferroic, ferroelectric/superconducting to ferroelectric/2D materials, and finally their expansion into the realm of ferroelectric resonant tunneling diodes (FeRTDs). This latter aspect, i.e., resonant tunneling offers a radically new approach to exploiting tunneling behavior in ferroelectric heterostructures. We discuss examples that have successfully shown room temperature ferroelectric control of parameters such as the resonant peak, tunnel current ratio at peak and negative differential resistance. We conclude the perspective by summarizing the challenges and highlighting the opportunities for the future development of hybrid FTJs with a special emphasis on a new possible type of FeRTD device. The prospects for enhanced performance and expanded functionality ignite tremendous excitement in hybrid FTJs and FeRTDs for future nanoelectronics.