Photon drag at the junction between metal and 2d semiconductor
Dmitry Svintsov, Zhanna Devizorova

TL;DR
This paper demonstrates that photon drag effects are significantly enhanced at metal-2d material junctions due to non-uniform electromagnetic fields, with implications for photovoltage generation depending on polarization and material parameters.
Contribution
The study combines diffraction theory and microscopic transport models to reveal how photon drag at metal-2d junctions depends on electromagnetic and material properties, highlighting polarization-dependent effects.
Findings
Photon drag is stronger at metal-2d junctions due to diffraction effects.
Photon drag photovoltage inversely depends on frequency, charge density, and a momentum transfer coefficient.
For s-polarized light, photon drag dominates over thermoelectric effects at the junction.
Abstract
Photon drag represents a mechanism of photocurrent generation wherein the electromagnetic (EM) field momentum is transferred directly to the charge carriers. It is believed to be small by the virtue of low photon momentum compared to the typical momenta of the charge carriers. Here, we show that photon drag becomes particularly strong at the junctions between metals and 2d materials, wherein highly non-uniform local EM fields are generated upon diffraction. To this end, we combine an exact theory of diffraction at 'metal-2d material' junctions with microscopic transport theory of photon drag, and derive the functional dependences of the respective photovoltage on the parameters of EM field and 2d system. The voltage responsivity appears inversely proportional to the electromagnetic frequency , the sheet density of charge, and a dimensionless momentum transfer coefficient…
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Surface and Thin Film Phenomena · Integrated Circuits and Semiconductor Failure Analysis
