Evidence of anisotropic three-dimensional weak-localization in TiSe$_{2}$ nanoflakes
Xiaocui Wang, Yang Yang, Yongkai Li, Guangtong Liu, Junxi Duan, Zhiwei Wang, Li Lu, Fan Yang

TL;DR
This paper reports the discovery of anisotropic three-dimensional weak localization effects in TiSe₂ nanoflakes, revealing unique phase-coherent transport properties distinct from other transition-metal dichalcogenides.
Contribution
It provides the first evidence of anisotropic 3D weak localization in TiSe₂ nanoflakes, expanding understanding of quantum transport in layered materials.
Findings
Observation of anisotropic negative magnetoresistance in TiSe₂ nanoflakes
Incompatibility with conventional 2D weak localization or Kondo effect explanations
Attribution of effects to three-dimensional weak localization
Abstract
TiSe is a typical transition-metal dichalcogenide known for its charge-density wave order. In this study, we report the observation of an unusual anisotropic negative magnetoresistance in exfoliated TiSe nanoflakes at low temperatures. Unlike the negative magnetoresistance reported in most other transition-metal dichalcogenides, our results cannot be explained by either the conventional two-dimensional weak localization effect or the Kondo effect. A comprehensive analysis of the data suggests that the observed anisotropic negative magnetoresistance in TiSe flakes is most likely caused by the three-dimensional weak localization effect. Our findings contribute to a deeper understanding of the phase-coherent transport processes in TiSe.
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Taxonomy
Topics2D Materials and Applications · Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films
