Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs
Zhentao Xiao, Haimeng Huang, Zonghao Zhang, Chenxing Wang
TL;DR
This paper introduces a Taylor modeling approach for optimizing three-dimensional high-k superjunction MOSFETs, providing a comparative analysis of structures to guide manufacturing decisions.
Contribution
It presents a novel Taylor modeling method for aspect-ratio optimization, improving computational efficiency over traditional Bessel methods.
Findings
Taylor modeling reduces computational complexity
Comparative analysis of four superjunction structures
Insights for manufacturing superjunction MOSFETs
Abstract
This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Silicon Carbide Semiconductor Technologies · Induction Heating and Inverter Technology