Coulomb impurities in graphene driven by fast ions

TL;DR

This paper develops a theoretical model to analyze electronic transitions in graphene caused by fast-moving ions interacting with Coulomb impurities, providing exact solutions to the 2D Dirac equation for this scenario.

Contribution

It introduces a novel exact solution framework for the time-dependent 2D Dirac equation describing ion-impurity interactions in graphene.

Findings

Calculated transition probabilities and cross sections for electronic excitations.

Provided insights into ion-induced electronic processes in 2D materials.

Enhanced understanding of impurity-ion interactions in graphene.

Abstract

We provide a theoretical model for electronic transitions in a two-dimensional (2D) artificial atom in a graphene monolayer. The artificial atom is due to the presence of a charged adatom (Coulomb impurity) in the layer and interacts with a fast ultrarelativistic ion moving parallel to the layer. We compute the probability and cross sections for the corresponding electronic transitions by means of an exact solution of the time-dependent 2D Dirac equation describing the interaction of the planar atom with the electromagnetic field of the ultrarelativistic projectile.