ZnO-based Semiconductors and Structures for Transistors, Optoelectronic Devices and Sustainable Electronics
Darragh Buckley, Alex Lonergan, Colm O'Dwyer

TL;DR
This paper reviews zinc oxide and related metal oxide semiconductors, highlighting their tunable properties, various deposition techniques, and potential applications in sustainable electronics and optoelectronic devices.
Contribution
It provides a comprehensive overview of ZnO-based semiconductors, emphasizing their unique properties, fabrication methods, and suitability for diverse electronic and optoelectronic applications.
Findings
ZnO exhibits wide bandgap and high electron mobility.
Deposition methods influence the properties and performance.
ZnO-based devices are promising for sustainable electronics.
Abstract
Metal oxide thin films are of great interest in scientific advancement, particularly semiconductor thin films in transistors and in a wide range of optoelectronic applications. Many metal oxide thin films attract interest for their electronic bandgap, charge carrier mobility, optical opacity, luminescence, low cost, relative abundance and environmentally-friendly production. Additionally, these properties are often tuneable via particle size, film density, surface morphology, film deposition, growth method, hetero-interface engineering or ion-doping. Zinc oxide as a n-type semiconducting metal oxide is material of great interest owing to its intrinsically wide direct bandgap, high electron mobility, relatively high exciton binding energy, high optical transparency, demonstrated metal-ion doping optoelectronic effects, a range of different particle morphologies and deposition methods,…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsZnO doping and properties
