Stacking-dependent ferroicity of reversed bilayer: altermagnetism or ferroelectricity
Wencong Sun, Haoshen Ye, Li Liang, Ning Ding, Shuai Dong, Shan-shan, Wang

TL;DR
This paper introduces a novel method for inducing altermagnetism in 2D bilayer materials through reversed stacking, enabling controllable spin-splitting and magnetoelectric effects without net magnetization.
Contribution
It proposes a new design approach for 2D altermagnets using bilayer reversed stacking, demonstrated with bilayer PtBr3, and explores its potential for spintronic applications.
Findings
Reversed stacking induces intrinsic altermagnetism in 2D bilayers.
Stacking order and sliding enable reversible polarization and ferroelectricity.
Polarization-controlled spin-splitting allows magnetoelectric coupling detectable by Kerr effect.
Abstract
Altermagnetism, as a new branch of magnetism independent of traditional ferromagnetism and antiferromagnetism, has attracted extensive attention recently. At present, researchers have proved several kinds of three-dimensional altermagnets, but research on two-dimensional (2D) altermagnets remains elusive. Here, we propose a method for designing altermagnetism in 2D lattices: bilayer reversed stacking. This method could enable altermagnetism-type spin splitting to occur intrinsically and the spin-splitting can be controlled by crystal chirality. We also demonstrate it through a real material of bilayer PtBr with AB' stacking order. Additionally, the combination of stacking order and slidetronics offers new opportunities for electrical writing and magnetic reading of electronic devices. In the case of AC' stacking, interlayer sliding results in reversible spontaneous polarization.…
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