Epitaxial growth of mono- and (twisted) multilayer graphene on SiC(0001)
Hao Yin, Mark Hutter, Christian Wagner, F. Stefan Tautz, Fran\c{c}ois, C. Bocquet, and Christian Kumpf

TL;DR
This paper demonstrates a method to produce twisted bilayer graphene on SiC(0001) by decoupling the buffer layer through high-temperature annealing in borazine, resulting in partial coverage of high-quality tBLG with potential for further optimization.
Contribution
It introduces a temperature-controlled decoupling process to convert buffer layers into twisted bilayer graphene, advancing control over graphene heterostructure fabrication.
Findings
20% of the surface is covered with twisted bilayer graphene.
Higher annealing temperatures lead to multilayer graphene growth.
Decoupling methods like intercalation could improve coverage.
Abstract
To take full advantage of twisted bilayers of graphene or other two-dimensional materials, it is essential to precisely control the twist angle between the stacked layers, as this parameter determines the properties of the heterostructure. In this context, a growth routine using borazine as a surfactant molecule on SiC(0001) surfaces has been reported, leading to the formation of high-quality epitaxial graphene layers that are unconventionally oriented, i.e., aligned with the substrate lattice (G-) [Bocquet et al. Phys. Rev. Lett. 125, 106102 (2020)]. Since the G- layer sits on a buffer layer, also known as zeroth-layer graphene (ZLG), which is rotated with respect to the SiC substrate and still covalently bonded to it, decoupling the ZLG- from the substrate can lead to high-quality twisted bilayer graphene (tBLG). Here we report the decoupling…
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Taxonomy
TopicsGraphene research and applications · Silicon Carbide Semiconductor Technologies · Boron and Carbon Nanomaterials Research
