Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration

TL;DR

This study investigates how varying Ge concentration in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ affects its spin textures, revealing Rashba-like states, asymmetric spin polarization, and potential implications for spintronic devices.

Contribution

It provides experimental and theoretical insights into spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through Ge doping, highlighting the evolution of Rashba-like states and spin polarization.

Findings

Rashba-like states shift to lower energies with increased Ge concentration.

Pronounced in-plane and out-of-plane spin polarization asymmetries are observed.

Theoretical calculations confirm asymmetric spin polarization in Rashba-like states.

Abstract

The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\bar{\Gamma}\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using laser radiation (Laser Spin-ARPES) with variation of the concentration of substitutional Ge atoms (x from 0.1 to 0.8) for in-plane ($s_x$) and out-of-plane ($s_z$) spin orientation. The formation of Rashba-like states is shown, which shift to lower energies with increasing Ge concentration. In the region of Ge concentrations from 50% to 75%, the contribution of these states to the formed spin-dependent dispersions becomes predominant. A pronounced in-plane ($s_y$) spin polarization, asymmetric for opposite $\pm k_\parallel$ directions, is revealed for the Dirac cone states, while the Rashba-like states exhibit a pronounced asymmetry in both in-plane ($s_y$) and out-of-plane ($s_z$) spin polarizations. Theoretical calculations confirmed the asymmetric polarization of the Rashba-like states formed in the $\bar{\rm K}\bar{\Gamma}\bar{\rm K}'$ path of the BZ, simultaneously for in-plane and out-of-plane spin orientation. Constant energy maps for Rashba-like states show a pronounced $s_z$ spin component along the $\bar{\Gamma}\bar{\rm K}$ direction, with a sign change as the contour crosses the $\bar{\Gamma}\bar{\rm M}$ direction. The observed spin polarization can influence the development of spin devices based on magnetic topological insulators.