Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

TL;DR

This paper reviews the limitations of the lift-off process in manufacturing carbon nanotube FETs and emphasizes the need for developing etching techniques for scalable, high-performance device fabrication.

Contribution

It provides a critical analysis of lift-off process limitations and advocates for future research to focus on etching methods for scalable CNT FET production.

Findings

Lift-off process limits CNT FET performance.

Lift-off is unsuitable for scalable manufacturing.

Future work should develop etching-based fabrication techniques.

Abstract

Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.