Layered Multiple Scattering Approach to Hard X-ray Photoelectron Diffraction: Theory and Application

TL;DR

This paper introduces a k-space layered multiple scattering theory for X-ray photoelectron diffraction, enabling broad energy range analysis and finite temperature simulations, with practical applications to core-level photoemission in silicon and germanium.

Contribution

It presents a novel k-space implementation of multiple scattering XPD formalism using the layer KKR method, overcoming convergence issues of previous real-space approaches.

Findings

Broad energy range (20-8000 eV) analysis without convergence problems

Simulation of XPD effects at finite temperatures

Application to circular dichroism in core-level photoemission

Abstract

Photoelectron diffraction (PED) is a powerful and essential experimental technique for resolving the structure of surfaces with sub-angstrom resolution. In the high energy regime, researchers in angle-resolved photoemission spectroscopy (ARPES) observe modulating patterns attributed to X-ray-PED (XPD) effects. This is accompanied by other challenges such as low cross-sections, significant photon momentum transfer, and non-negligible phonon scattering. Overall, XPD is not only an advantageous approach but also exhibits unexpected effects. To disentangle these diffraction influences, we present a PED implementation for the SPRKKR package that utilizes multiple scattering theory and a one-step model in the photoemission process. Unlike real-space implementations of the multiple scattering XPD formalism, we propose a k-space implementation based on the layer KKR method. The main advantage of this method is its ability to address a very broad kinetic energy range (20-8000 eV) without convergence problems related to angular momentum and cluster size. Furthermore, the so-called alloy analogy model can be used to simulate XPD at finite temperatures as well as XPD effects observed in soft and hard X-ray ARPES. For practical applications, we have calculated the circular dichroism in angular distributions (CDAD) associated with core-level photoemission of 2p from Si(100) and 3p from Ge(100). Photoelectrons are excited by hard X-rays (6000 eV) with right and left circularly polarized radiation (RCP and LCP, respectively).