Atomic-Scale Observation of Moire potential in Twisted Hexagonal Boron Nitride Layers by Electron Microscopy
Rina Mishima, Takuro Nagai, Hiroyo Segawa, Masahiro Ehara, and Takashi, Uchino

TL;DR
This study develops a method using electron microscopy to directly observe and reconstruct the moire potential in twisted hexagonal boron nitride layers, revealing the role of atomic overlap in moire pattern formation.
Contribution
The paper introduces a novel approach combining chemical exfoliation and high-resolution electron microscopy to visualize and analyze the moire potential at atomic resolution in MSLs.
Findings
Moiré diffraction spots can be observed in Fourier space.
The moire potential is reconstructed via inverse Fourier transform.
Local atomic overlap influences moire potential distribution.
Abstract
Moire superlattices (MSLs) are an emerging class of two-dimensional functional materials whose electronic states can be tuned by the twist angle between two van der Waals layers and/or the relative placement of the layers. The intriguing properties of MSLs are closely correlated to the moir\'e potential, which is the electrostatic potential induced by interlayer coupling. Intensive efforts have been made to understand the nature and distribution of the moire potential by using various experimental and theoretical techniques. However, the experimental observation of the moir\'e potential is still challenging because of the possible presence of the surface and/or interlayer contaminants. In this work, we develop a method to obtain hexagonal boron nitride (hBN) nanolayers (with or without twist) using a specially designed chemical exfoliation technique. The resulting hBN nanolayers are…
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Taxonomy
TopicsSemiconductor materials and devices · Surface and Thin Film Phenomena · Electronic and Structural Properties of Oxides
