Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet

TL;DR

This paper introduces quadri-layertronics in 2D multiferroic antiferromagnets, enabling four-layer physics control via gate voltage, expanding the potential of layertronics beyond binary systems.

Contribution

The work demonstrates the theoretical and computational realization of gate-controllable quadri-layertronics, a novel concept extending layertronics to four-layer physics.

Findings

Layer physics can be engineered into four states, not just binary.

Gate voltage can selectively control layer Hall effects.

First-principles calculations confirm gate control in OsCl2 quadrilayer.

Abstract

Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into quaternary mode, giving rise to the concept of quadri-layertronics. The mechanism correlates to the interplay between out-of-plane ferroelectricity and valley physics in antiferromagnetic multiferroic quadrilayer, which enables the layer-locked Berry curvature and Hall effect, i.e., deflecting the carriers with four different layer physics to move in specific directions. More importantly, the quadri-layertronics can be generated and manipulated by controlling the interlayer dipole arrangements via a gate voltage, allowing for the selective induction and detection of layer Hall effect in specific layers. Using first principles calculations, we further demonstrate the gate control of quadri-layertronics in multiferroic antiferromagnet of quadrilayer OsCl2. These explored phenomena and insights greatly enrich the research on layertronics.