Quantifying Crystallographic Orientation Effects on Tunneling Magnetoresistance via Transfer Matrix and Simulation

TL;DR

This paper uses the transfer matrix method to systematically analyze how different crystallographic orientations affect tunneling magnetoresistance in layered magnetic systems, providing new insights into orientation-dependent electronic transport.

Contribution

It develops an orientation-specific transfer matrix framework to quantify the impact of crystallographic orientation on TMR, which was previously underexplored.

Findings

Orientation significantly influences TMR values.

The framework enables systematic analysis of orientation effects.

Results improve understanding of spin-dependent tunneling mechanisms.

Abstract

The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying the influence of different crystallographic orientations on tunneling magnetoresistance (TMR) remains underexplored [1, 2]. This study employs the transfer matrix method to construct orientation-specific matrices, enabling a systematic investigation of conductance variations under different magnetic and crystallographic conditions. This approach offers a deeper understanding of how crystallographic orientation modulates TMR by developing a framework that adapts the TMM to account for orientation-dependent electronic states and interfacial characteristics [3]. Fundamentally, the TMM represents the partition function for systems with interactions limited to nearest neighbors. It is particularly well-suited for modeling spin-dependent electron tunneling in oriented magnetic tunnel junctions [4, 5].