Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles, Zhanning Wang, Aaquib, Shamim, Isaac Vorreiter, Ruoyu Li, Clement Godfrin, Stefan Kubicek, Kristiaan, De Greve, Dimitrie Culcer, and Alexander R. Hamilton

TL;DR
This study investigates the g-tensor and spin-orbit effects in planar silicon hole quantum dots, revealing anisotropies and the dominant surface Dresselhaus mechanism, with implications for spin-qubit device optimization.
Contribution
It provides the first detailed analysis of g-tensor reproducibility and spin-orbit coupling mechanisms in planar silicon hole quantum dots across different hole occupations.
Findings
g-tensor and spin-leakage current are highly anisotropic
Surface Dresselhaus is identified as the dominant spin-orbit mechanism
g-factor difference correlates with spin-leakage current anisotropy
Abstract
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor and spin-relaxation induced leakage current within the Pauli spin-blockade regime as a function of magnetic-field orientation at three different hole occupation numbers. We find the g-tensor and spin-leakage current to be highly anisotropic due to light-hole/heavy-hole mixing and spin-orbit mixing, but discover the anisotropies to be relatively insensitive to the dot hole number. Furthermore, we extract the dominant inter-dot spin-orbit coupling mechanism as surface Dresselhaus, with an in-plane orientation parallel to transport and magnitude 300 neV. Finally, we observe a strong correlation between the g-factor…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Magnetic Field Sensors Techniques
