Weak antilocalization in the transition metal telluride Ta$_2$Pd$_3$Te$_5$

TL;DR

This study investigates the weak antilocalization effect in the layered topological crystalline insulator Ta$_2$Pd$_3$Te$_5$, revealing contributions from both topological edge and bulk states through magnetotransport measurements.

Contribution

It provides the first detailed analysis of WAL in Ta$_2$Pd$_3$Te$_5$, distinguishing edge state effects from bulk contributions using anisotropic magnetoconductance measurements.

Findings

WAL observed in both perpendicular and parallel orientations.

WAL contribution from topological edge states identified.

Quantitative analysis based on Hikami-Larkin-Nagaoka model.

Abstract

We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low temperatures. Low temperature magnetotransport shows that Ta$_2$Pd$_3$Te$_5$ exhibits weak antilocatization (WAL) effect in both perpendicular orientation and parallel orientation, suggesting an contribution of the WAL effect from both topological edge states and bulk states. By measuring the anisotropic magnetoconductance and then subtracting the contribution of bulk states, the WAL effect associated with topological edge states can be revealed and analyzed quantitatively based on the two-dimensional Hikami-Larkin-Nagaoka model. Our results have important implications in understanding the WAL phenomena in Ta$_2$Pd$_3$Te$_5$.