Characterization of newly developed large area SiC sensors for the NUMEN experiment

TL;DR

This paper presents the development and initial characterization of large-area silicon carbide (SiC) p-n junction detectors designed for particle identification in the NUMEN experiment, focusing on their electrical and energy resolution properties.

Contribution

It introduces new large-area SiC sensors with specific doping profiles and provides initial electrical and performance characterizations for their application in nuclear physics experiments.

Findings

Successful fabrication of large-area SiC detectors.

Determination of depletion voltage and doping profiles.

Initial energy resolution measurements using radioactive sources.

Abstract

First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer, in preparation for future NUMEN experimental campaigns. First characterizations of sensors from two wafers obtained with epitaxial silicon carbide growth and with different doping concentration are presented. Current (I-V) and capacitance (C-V) characteristics are investigated in order to determine the full depletion voltage and the doping profile. Radioactive {\alpha}-sources are used to measure the energy resolution and estimate the depletion depth.