Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs
Kevin L. Schulte, John F. Geisz, Harvey L. Guthrey, Ryan M. France,, Edgard Winter da Costa, and Myles A. Steiner

TL;DR
This study develops methods to suppress phase separation in AlGaInAs buffers, improving the quality and efficiency of 1550 nm photovoltaic devices on GaAs, with implications for scalable laser and power conversion technologies.
Contribution
It introduces optimized epitaxial growth strategies, including substrate misorientation and doping choices, to reduce defects and enhance device performance in AlGaInAs-based photovoltaic converters.
Findings
Suppression of phase separation via substrate misorientation and Zn-doping.
Achievement of low TDD (3.5 x 10^6 cm^-2) in AlGaInAs buffers.
High efficiency (31.9%) laser power conversion demonstrated.
Abstract
We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) towards the (111)A plane and Zn-doping instead of Si-doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a (411)A GaAs substrate using a Zn-doped AlGaInAs CGB with TDD = 3.5 +/- 0.2 x 106 cm^-2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar…
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Taxonomy
Topicssolar cell performance optimization · Semiconductor Quantum Structures and Devices · Silicon and Solar Cell Technologies
