High temperature diffusion enabled epitaxy of the Ti-O system

TL;DR

This paper introduces a novel high-temperature epitaxial growth method for the Ti-O system using thermally activated oxygen diffusion, resulting in high-quality, single-phase films with enhanced crystallinity and electronic properties.

Contribution

It demonstrates a self-regulated growth mode enabled by oxygen diffusion from substrates, advancing epitaxy techniques for transition metal oxides at ultra-high temperatures.

Findings

Achieved oxidation selectivity for single-phase Ti-O films

Produced films with superior crystallinity compared to conventional methods

Enabled new opportunities for high-purity epitaxial transition metal oxide platforms

Abstract

High temperatures promote kinetic processes which can drive crystal synthesis towards ideal thermodynamic conditions, thereby realizing samples of superior quality. While accessing very high temperatures in thin-film epitaxy is becoming increasingly accessible through laser-based heating methods, demonstrations of such utility are still emerging. Here we realize a novel self-regulated growth mode in the Ti-O system by relying on thermally activated diffusion of oxygen from an oxide substrate. We demonstrate oxidation selectivity of single phase films with superior crystallinity to conventional approaches as evidenced by structural and electronic measurements. The diffusion-enabled mode is potentially of wide use in the growth of transition metal oxides, opening up new opportunities for ultra-high purity epitaxial platforms based on d -orbital systems.