Quench switching of Mn2As
Kamil Olejn\'ik, Zden\v{e}k Ka\v{s}par, Jan Zub\'a\v{c}, Sjoerd, Telkamp, Andrej Farka\v{s}, Dominik Kriegner, Karel V\'yborn\'y, Jakub, \v{Z}elezn\'y, Zbyn\v{e}k \v{S}ob\'a\v{n}, Peng Zeng, Tom\'a\v{s} Jungwirth,, V\'it Nov\'ak, Filip Krizek

TL;DR
This paper reports the discovery of quench switching in Mn2As thin films, showing significant resistivity changes and long retention times, similar to CuMnAs, and highlights the potential of Cu2Sb structure antiferromagnets for advanced magnetic state studies.
Contribution
It demonstrates quench switching in Mn2As, expanding the class of antiferromagnets exhibiting this effect and analyzing its magnetic origin and dependence on Néel temperature.
Findings
Resistivity increases by hundreds of percent at 5K
Longer retention time of metastable states in Mn2As
Relaxation dynamics proportional to Néel temperature
Abstract
We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the N\'eel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and…
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Taxonomy
TopicsMXene and MAX Phase Materials
